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Reused with permission from L. R. Baylor, Journal of Vacuum Science &
Technology B, 22, 3021 (2004). Copyright 2004, AVS The Science &
Technology Society.
(Full text PDF)
L. R. Baylor, W. L. Gardner, X. Yang, R. J. Kasica, M. A. Guillorn, B.
Blalock, H. Cui, D. K. Hensley, S. Islam, D. H. Lowndes, A. V. Melechko,
V. I. Merkulov, D. C. Joy, P. D. Rack, M. L. Simpson, and D. K. Thomas
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
(Received 3 June 2004; accepted 4 October 2004; published
10 December 2004)
The Digital Electrostatically focused e-beam Array direct-write
Lithography (DEAL) concept is currently under development at Oak Ridge
National Laboratory (ORNL). This concept incorporates a digitally
addressable field-emission array (DAFEA) built into a logic and control
integrated circuit to function as the write head for an e-beam
lithography tool. The electrostatic focusing is integrated on the DAFEA
and consists of additional grids lithographically aligned above the
emitters and extraction grid, each separated by a dielectric (nominally
low-temperature SiO2) layer. Prototypes of the DAFEA have been
fabricated and used to test the focusing of the electron beams and to
pattern lines in PMMA resist. First lithography tests have used electron
energies of 500 eV to pattern lines less than 1 µm wide at a working
distance of 500 µm which extrapolates to <300 nm at the nominal DEAL
design working distance of 100 µm. Aspects of the DEAL lithography
testing and further development are discussed. ©2004 American Vacuum
Society
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