Free Science Home

personal home page of

Anatoli V. Melechko

Home

Research

Publications

Contact info

Curriculum vitae

Sergey Meleshko

Art

Pets

Photo galleries

Funny stuff  

Defect-mediated condensation of a charge density wave

Science, 1999. 285(5436): p. 2107-2110

Full text access (subscription)

Hanno H. Weitering, 12 Joseph M. Carpinelli, 12 Anatoli V. Melechko, 12
 Jiandi Zhang, 3 Miroslaw Bartkowiak, 12 E. Ward Plummer 12


Symmetry, dimensionality, and disorder play a pivotal role in critical phenomena. The atomic imaging capabilities of the scanning tunneling microscope were used to directly visualize the interaction between charge density oscillations and lattice defects in a two-dimensional charge density wave (CDW) system. Point defects act as nucleation centers of the CDW, which, as the temperature is lowered, results in the formation of pinned CDW domains that are separated by atomically abrupt charge boundaries. Incomplete freezing of substitutional disorder at low temperature indicates a novel CDW-mediated hopping of pinning centers.


1 Department of Physics and Astronomy, University of Tennessee, Knoxville, TN 37996, USA.
2 Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
3 Department of Physics, Florida International University, University Park, Miami, FL 33199, USA.

 

Cited by

Record 1 of 56
Lobo, J; Farias, D; Hulpke, E; Michel, EG. 2005. Phonon dynamics of the Sn/Ge(111) surface at room temperature and low temperature determined by helium-atom scattering. PHYSICAL REVIEW B 71 (20): art. no.-205402.

--------------------------------------------------------------------------------
Record 2 of 56
Maki, M; Nishizaki, T; Shibata, K; Kobayashi, N. 2005. Layered charge-density waves with nanoscale coherence in YBa2Cu3O7-delta. PHYSICAL REVIEW B 72 (2): art. no.-024536.

--------------------------------------------------------------------------------
Record 3 of 56
Cvetko, D; Ratto, F; Cossaro, A; Bavdek, G; Morgante, A; Floreano, L. 2005. Displacive phase transition at the 5/3 monolayer of Pb on Ge(001). PHYSICAL REVIEW B 72 (4): art. no.-045404.

--------------------------------------------------------------------------------
Record 4 of 56
Cybulski, O; Matysiak, D; Babin, V; Holyst, R. 2005. Pattern formation in nonextensive thermodynamics: Selection criterion based on the Renyi entropy production. JOURNAL OF CHEMICAL PHYSICS 122 (17): art. no.-174105.

--------------------------------------------------------------------------------
Record 5 of 56
Hwang, IS; Chang, SH; Fang, CK; Chen, LJ; Tsong, TT. 2005. Hydrogen-adsorption induced atomic rearrangement of a Pb monolayer on Si(111). PHYSICAL REVIEW LETTERS 94 (4): art. no.-045505.

--------------------------------------------------------------------------------
Record 6 of 56
Guo, JD; Shi, JR; Plummer, EW. 2005. Low temperature disordered phase of alpha-Pb/Ge(111). PHYSICAL REVIEW LETTERS 94 (3): art. no.-036105.

--------------------------------------------------------------------------------
Record 7 of 56
Escuadro, AA; Goodner, DM; Okasinski, JS; Bedzyk, MJ. 2004. X-ray standing wave analysis of the Sn/Si(111)-root 3x root 3 surface. PHYSICAL REVIEW B 70 (23): art. no.-235416.

--------------------------------------------------------------------------------
Record 8 of 56
Dudr, V; Tsud, N; Fabik, S; Vondracek, M; Matolin, V; Chab, V; Prince, KC. 2004. Evidence for valence-charge fluctuations in the root 3 x root 3-Pb/Si(111) system. PHYSICAL REVIEW B 70 (15): art. no.-155334.

--------------------------------------------------------------------------------
Record 9 of 56
Farias, D; Kaminski, W; Lobo, J; Ortega, J; Hulpke, E; Perez, R; Flores, F; Michel, EG. 2004. Phonon dynamics of the Sn/Ge(111)-(3 x 3) surface. APPLIED SURFACE SCIENCE 237 (1-4): 86-92.

--------------------------------------------------------------------------------
Record 10 of 56
Lee, G; Yu, SY; Kim, H; Koo, JY. 2004. Defect-induced perturbation on Si(111)4x1-In: Period-doubling modulation and its origin. PHYSICAL REVIEW B 70 (12): art. no.-121304.

--------------------------------------------------------------------------------
Record 11 of 56
Davila, ME; Avila, J; Ascolani, H; Le Lay, G; Gothelid, M; Karlsson, UO; Asensio, MC. 2004. Surface phase transitions at metal-semiconductor interfaces: a revisit is needed. APPLIED SURFACE SCIENCE 234 (1-4): 274-285.

--------------------------------------------------------------------------------
Record 12 of 56
Kaminski, W; Jelinek, P; Perez, R; Flores, F; Ortega, J. 2004. Si-substitutional defects on the alpha-Sn/Si(111)-(root 3 x root 3) surface. APPLIED SURFACE SCIENCE 234 (1-4): 286-291.

--------------------------------------------------------------------------------
Record 13 of 56
Losovyj, YB; Yakovkin, IN; Jeong, HK; Wisbey, D; Dowben, PA. 2004. Lattice-stiffening transition in gadolinium chains on furrowed (112)surfaces. JOURNAL OF PHYSICS-CONDENSED MATTER 16 (26): 4711-4724.

--------------------------------------------------------------------------------
Record 14 of 56
Fialkowski, M; Nowakowski, R; Holyst, R. 2004. A morphological study of the formation of PdHx on thin palladium films. JOURNAL OF PHYSICAL CHEMISTRY B 108 (22): 7373-7376.

--------------------------------------------------------------------------------
Record 15 of 56
Losovyj, Y; Yakovkin, IN; Dowben, PA. 2004. The development of the gadolinium surface state. VACUUM 74 (2): 191-194.

--------------------------------------------------------------------------------
Record 16 of 56
Fialkowski, M; Grzeszczak, P; Nowakowski, R; Holyst, R. 2004. Absorption of mercury in gold films and its further desorption: Quantitative morphological study of the surface patterns. JOURNAL OF PHYSICAL CHEMISTRY B 108 (16): 5026-5030.

--------------------------------------------------------------------------------
Record 17 of 56
Okasinski, JS; Kim, C; Walko, DA; Bedzyk, MJ. 2004. Ray standing wave imaging of the 1/3 monolayer Sn/Ge-(111) surface. PHYSICAL REVIEW B 69 (4): art. no.-041401.

--------------------------------------------------------------------------------
Record 18 of 56
Shi, JR; Wu, B; Xie, XC; Plummer, EW; Zhang, ZY. 2003. Surface phase transitions induced by electron mediated adatom-adatom interaction. PHYSICAL REVIEW LETTERS 91 (7): art. no.-076103.

--------------------------------------------------------------------------------
Record 19 of 56
Farias, D; Kaminski, W; Lobo, J; Ortega, J; Hulpke, E; Perez, R; Flores, F; Michel, EG. 2003. Phonon softening, chaotic motion, and order-disorder transition in Sn/Ge(111). PHYSICAL REVIEW LETTERS 91 (1): art. no.-016103.

--------------------------------------------------------------------------------
Record 20 of 56
Zhang, HM; Jemander, ST; Lin, N; Hansson, GV; Uhrberg, RIG. 2003. Origin of 3 x 3 diffraction on the Sn1-xSix/Si(111)root 3 x root 3 surface. SURFACE SCIENCE 531 (1): 21-28.

--------------------------------------------------------------------------------
Record 21 of 56
Kim, YB; Millis, AJ. 2003. Residual resistivity near a two-dimensional metamagnetic quantum critical point. PHYSICAL REVIEW B 67 (8): art. no.-085102.

--------------------------------------------------------------------------------
Record 22 of 56
Ast, CR; Hochst, H. 2003. Indication of charge-density-wave formation in Bi(111). PHYSICAL REVIEW LETTERS 90 (1): art. no.-016403.

--------------------------------------------------------------------------------
Record 23 of 56
Petersen, L; Ismail; Plummer, EW. 2002. Defect-blurred two-dimensional phase transition. PROGRESS IN SURFACE SCIENCE 71 (1-4): 1-29.

--------------------------------------------------------------------------------
Record 24 of 56
Brochard, S; Artacho, E; Custance, O; Brihuega, I; Baro, AM; Soler, JM; Gomez-Rodriguez, JM. 2002. Ab initio calculations and scanning tunneling microscopy experiments of the Si(111)-(root 7/x root 3)-Pb surface. PHYSICAL REVIEW B 66 (20): art. no.-205403.

--------------------------------------------------------------------------------
Record 25 of 56
Fialkowski, M; Holyst, R. 2002. Morphological changes during the order-disorder transition in the two- and three-dimensional systems of scalar nonconserved order parameters. PHYSICAL REVIEW E 66 (4): art. no.-046121, Part 2.

--------------------------------------------------------------------------------
Record 26 of 56
Cho, JH; Oh, DH; Kleinman, L. 2002. Theoretical study of Na adsorption on top of In chains on the Si(111) surface. PHYSICAL REVIEW B 66 (7): art. no.-075423.

--------------------------------------------------------------------------------
Record 27 of 56
Ortega, J; Perez, R; Jurczyszyn, L; Flores, F. 2002. Ge substitutional defects and the root 3 x root 3 <-> 3 x 3 transition in alpha-Sn/Ge(111). JOURNAL OF PHYSICS-CONDENSED MATTER 14 (30): 7147-7154.

--------------------------------------------------------------------------------
Record 28 of 56
Yeom, HW; Horikoshi, K; Zhang, HM; Ono, K; Uhrberg, RIG. 2002. Nature of the broken-symmetry phase of the one-dimensional metallic In/Si(111) surface. PHYSICAL REVIEW B 65 (24): art. no.-241307.

--------------------------------------------------------------------------------
Record 29 of 56
Ortega, J; Perez, R; Flores, F. 2002. Dynamical fluctuations and the root 3x root 3 <-> 3x3 transition in alpha-Sn/Ge(111) and Sn/Si(111). JOURNAL OF PHYSICS-CONDENSED MATTER 14 (24): 5979-6004.

--------------------------------------------------------------------------------
Record 30 of 56
Fialkowski, M; Holyst, R. 2002. Morphology from the maximum entropy principle: Domains in a phase ordering system and a crack pattern in broken glass. PHYSICAL REVIEW E 65 (5): art. no.-057105, Part 2.

--------------------------------------------------------------------------------
Record 31 of 56
Ottaviano, L; Profeta, G; Petaccia, L; Santucci, S; Pedio, M. 2002. Mechanism of the short range ordering in a 2D binary alloy. SURFACE SCIENCE 501 (1-2): L171-L176.

--------------------------------------------------------------------------------
Record 32 of 56
Plummer, EW; Ismail; Matzdorf, R; Melechko, AV; Pierce, JP; Zhang, JD. 2002. Surfaces: a playground for physics with broken symmetry in reduced dimensionality. SURFACE SCIENCE 500 (1-3): 1-27.

--------------------------------------------------------------------------------
Record 33 of 56
Lee, SS; Ahn, JR; Kim, ND; Min, JH; Hwang, CG; Chung, JW; Yeom, HW; Ryjkov, SV; Hasegawa, S. 2002. Adsorbate-induced pinning of a charge-density wave in a quasi-1D metallic chains: Na on the In/Si(111)-(4 x 1) surface. PHYSICAL REVIEW LETTERS 88 (19): art. no.-196401.

--------------------------------------------------------------------------------
Record 34 of 56
Refolio, MC; Sancho, JML; Rubio, J. 2002. Temperature-dependent gaps in the half-filled Hubbard model on a triangular lattice. PHYSICAL REVIEW B 65 (7): art. no.-075114.

--------------------------------------------------------------------------------
Record 35 of 56
Chiang, TC; Chou, MY; Kidd, T; Miller, T. 2002. Fermi surfaces and energy gaps in Sn/Ge(111). JOURNAL OF PHYSICS-CONDENSED MATTER 14 (1): R1-R20.

--------------------------------------------------------------------------------
Record 36 of 56
Melechko, AV; Simkin, MV; Samatova, NF; Braun, J; Plummer, EW. 2001. Complex structural phase transition in a defect-populated two-dimensional system. PHYSICAL REVIEW B 64 (23): art. no.-235424.

--------------------------------------------------------------------------------
Record 37 of 56
Petaccia, L; Floreano, L; Goldoni, A; Cvetko, D; Morgante, A; Grill, L; Verdini, A; Comelli, G; Paolucci, G; Modesti, S. 2001. Order-disorder character of the (3X3) to (root 3X root 3)R30 degrees phase transition of Sn on Ge(111). PHYSICAL REVIEW B 64 (19): art. no.-193410.

--------------------------------------------------------------------------------
Record 38 of 56
Millis, AJ; Morr, DK; Schmalian, J. 2001. Local defect in metallic quantum critical systems. PHYSICAL REVIEW LETTERS 8716 (16): art. no.-167202.

--------------------------------------------------------------------------------
Record 39 of 56
Xie, F; von Blanckenhagen, P; Wu, J; Liu, JW; Zhang, QZ; Chen, YC; Wang, EG. 2001. Contamination of Si surfaces in ultrahigh vacuum and formation of SiC islands. APPLIED SURFACE SCIENCE 181 (1-2): 139-144.

--------------------------------------------------------------------------------
Record 40 of 56
Floreano, L; Cvetko, D; Bavdek, G; Benes, M; Morgante, A. 2001. Order-disorder transition of the (3X3) Sn/Ge(111) phase. PHYSICAL REVIEW B 64 (7): art. no.-075405.

--------------------------------------------------------------------------------
Record 41 of 56
Swamy, K; Menzel, A; Beer, R; Deisl, C; Penner, S; Bertel, E. 2001. Low-dimensional systems on self-structured metal surfaces. SURFACE SCIENCE 482: 402-412, Part 1.

--------------------------------------------------------------------------------
Record 42 of 56
Refolio, MC; Sancho, JML; Rubio, J. 2001. Quantum Monte Carlo simulation of the triangular lattice in the repulsive Hubbard model. SURFACE SCIENCE 482: 632-639, Part 1.

--------------------------------------------------------------------------------
Record 43 of 56
Custance, O; Gomez-Rodriguez, JM; Baro, AM; Jure, L; Mallet, P; Veuillen, JY. 2001. Low temperature phases of Pb/Si(111). SURFACE SCIENCE 482: 1399-1405, Part 2.

--------------------------------------------------------------------------------
Record 44 of 56
Plummer, EW; Ismail; Matzdorf, R; Melechko, AV; Zhang, JD. 2001. The next 25 years of surface physics. PROGRESS IN SURFACE SCIENCE 67 (1-8): 17-44.

--------------------------------------------------------------------------------
Record 45 of 56
Flores, F; Ortega, J; Perez, R; Charrier, A; Thibaudau, F; Debever, JM; Themlin, JM. 2001. Electron correlation effects at Sn/Si(111)-3x3, root 3x root 3 and Sn/Ge(111)-3x3, root 3x root 3 reconstructions. PROGRESS IN SURFACE SCIENCE 67 (1-8): 299-307.

--------------------------------------------------------------------------------
Record 46 of 56
Perez, R; Ortega, J; Flores, F. 2001. Surface soft phonon and the root 3 x root 3 <-> 3 x 3 phase transition in Sn/Ge(III) and Sn/Si(III). PHYSICAL REVIEW LETTERS 86 (21): 4891-4894.

--------------------------------------------------------------------------------
Record 47 of 56
Rad, MG; Gothelid, M; Le Lay, G; Karlsson, UO; Grehk, TM; Sandell, A. 2001. Influence of charged impurities on the surface phases of Sn/Ge(111). SURFACE SCIENCE 477 (2-3): 227-234.

--------------------------------------------------------------------------------
Record 48 of 56
Petaccia, L; Floreano, L; Benes, M; Cvetko, D; Goldoni, A; Grill, L; Morgante, A; Verdini, A; Modesti, S. 2001. Determination of the (3 x 3)-Sn/Ge(111) structure by photoelectron diffraction. PHYSICAL REVIEW B 63 (11): art. no.-115406.

--------------------------------------------------------------------------------
Record 49 of 56
Jemander, ST; Lin, N; Zhang, HM; Uhrberg, RIG; Hansson, GV. 2001. An STM study of the surface defects of the (root 3 x root 3)-Sn/Si(111) surface. SURFACE SCIENCE 475 (1-3): 181-193.


Ottaviano, L; Melechko, AV; Santucci, S; Plummer, EW. 2001. Direct visualization of defect density waves in 2D. PHYSICAL REVIEW LETTERS 86 (9): 1809-1812.
Record 51 of 56
Swamy, K; Menzel, A; Beer, R; Bertel, E. 2001. Charge-density waves in self-assembled halogen-bridged metal chains. PHYSICAL REVIEW LETTERS 86 (7): 1299-1302.

Dowben, PA. 2000. The metallicity of thin films and overlayers. SURFACE SCIENCE REPORTS 40 (6-8): 151-245.

Kidd, TE; Miller, T; Chou, MY; Chiang, TC. 2000. Sn/Ge(111) surface charge-density-wave phase transition. PHYSICAL REVIEW LETTERS 85 (17): 3684-3687.

Uhrberg, RIG; Zhang, HM; Balasubramanian, T; Jemander, ST; Lin, N; Hansson, GV. 2000. Electronic structure of Sn/Si(111) root 3X root 3: Indications of a low-temperature phase. PHYSICAL REVIEW B 62 (12): 8082-8086.

Uhrberg, RIG; Zhang, HM; Balasubramanian, T. 2000. Determination of the Sn 4d line shape of the Sn/Ge(111) root 3 x root 3 and 3 x 3 surfaces. PHYSICAL REVIEW LETTERS 85 (5): 1036-1039.

Melechko, AV; Braun, J; Weitering, HH; Plummer, EW. 2000. Role of defects in two-dimensional phase transitions: An STM study of the Sn/Ge(111) system. PHYSICAL REVIEW B 61 (3): 2235-2245.